View bas16wt1rev1x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAS16WT1/D Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 1 CATHODE ANODE 3 MAXIMUM RATINGS (TA = 25°C) 1 2 Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V CASE 419–02, STYLE 2 Recurrent Peak Forward Current IR 200 mA SC–70/SOT–323 Peak Forward Surge Current IFM(surge) 500 mA Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded PD 200 mW TA = 25°C Derate above 25°C 1.6 mW/°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 0.625 °C/mW One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 m