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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bas21

BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 NC 2 1 2 1 SOT-23 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units WIV Working Inverse Voltage 250 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA Recurrent Peak Forward Current 700 mA if Peak Forward Surge Current if(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 Tstg °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2)

Keywords

 bas21 Datasheet, Design, MOSFET, Power

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