View bas21lt1rev0x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAS21LT1/D High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 1 CATHODE ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Continuous Reverse Voltage VR 250 Vdc 2 Peak Forward Current IF 200 mAdc CASE 318–08, STYLE 8 Peak Forward Surge Current IFM(surge) 625 mAdc SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARK