View bdw93cf datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V IC Collector Current (DC) 12 A ICP *Collector Current (Pulse) 15 A IB Base Current 0.2 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 100 V ICBO Collector Cut-off Current VCB = 100V,
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bdw93cf Datasheet, Design, MOSFET, Power
bdw93cf RoHS, Compliant, Service, Triacs, Semiconductor
bdw93cf Database, Innovation, IC, Electricity
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