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Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc BDX54C VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc DARLINGTON VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc 8 AMPERE • Monolithic Construction with Built–In Base–Emitter Shunt Resistors COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII • TO–220AB Compact Package SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII