View bga425 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BGA 425 Si-MMIC-Amplifier in SIEGET? 25-Technologie Preliminary data 3 • Multifunctional casc. 50 ? block (LNA / MIX) 4 • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD=3V,ID=9.5mA) 1 VPS05605 • Noise figure NF = 2.2 dB at 1.8 GHz • Reverse isolation >28 dB (appl.1) >35 dB (appl.2) Circuit Diagram • typical device voltage VD = 2 V to 5 V 6 +V Tape loading orientation 3 OUTA 1 OUTB 4 IN 2, 5 GND EHA07371 ESD: Electrostatic discharge sensitive device, observe handling precaution! PIN Configuration Type Marking Ordering Code Package 1, Out B 2, GND 3, Out A BGA 425 BMs Q62702-G0058 SOT-343 4, IN 5, GND 6, +V Maximum Ratings Parameter Symbol Value Unit Device curren
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bga425 Datasheet, Design, MOSFET, Power
bga425 RoHS, Compliant, Service, Triacs, Semiconductor
bga425 Database, Innovation, IC, Electricity
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