View bga427 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BGA 427 Si-MMIC-Amplifier in SIEGET? 25-Technologie Preliminary data 3 • Cascadable 50 ? -gain block 4 • Unconditionally stable • Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA) 1 VPS05605 • Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage VD = 2 V to 5 V 3 +V • Reverse isolation < 35 dB (appl.2) 4 OUT Circuit Diagram 1 IN 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BGA 427 BMs Q62702-G0067 1, IN 2, GND 3, +V 4, Out SOT-343 Maximum Ratings Parameter Symbol Value Unit Device current 25 mA ID Device voltage 6 V VD,+V 150 mW Total power dissipation, TS ? tbd °C Ptot
Keywords
bga427 Datasheet, Design, MOSFET, Power
bga427 RoHS, Compliant, Service, Triacs, Semiconductor
bga427 Database, Innovation, IC, Electricity
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