View bs170 cnv 2 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source voltage VGS max. 15 V variant envelope and intended for use Drain current (DC) ID max. 500 mA in relay, high-speed and Total power dissipation up to Tamb =25 °C Ptot max. 830 mW line-transformer drivers. Junction temperature Tj max. 150 °C Drain-source ON-resistance FEATURES VGS = 10 V; ID = 200 mA RDS(on) max. 5 ? • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed sw