View bs170rev1x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N–Channel — Enhancement BS170 1 DRAIN 2 GATE ? 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain–Source Voltage VDS 60 Vdc CASE 29–04, STYLE 30 Gate–Source Voltage TO–92 (TO–226AA) — Continuous VGS ±20 Vdc — Non–repetitive (tp ? 50 µs) VGSM ±40 Vpk Drain Current(1) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Reverse Current IGSS — 0.01 10 nAdc (VGS = 15 Vdc, VDS = 0) Drain–Source Breakdown Voltage V(BR)DSS 60 90 — Vdc (VGS = 0, ID = 100 µAdc) ON CHA