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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC182/D Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 182 183 184 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 50 30 30 Vdc Collector–Base Voltage VCBO 60 45 45 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resi