View bc640 datasheet:

BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? : BC636 -45 V : BC638 -60 V : BC640 -100 V VCES Collector-Emitter Voltage : BC636 -45 V : BC638 -60 V : BC640 -100 V VCEO Collector-Emitter Voltage : BC636 -45 V : BC638 -60 V : BC640 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter T