View bd243a datasheet:

BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD243 45 V : BD243A 60 V : BD243B 80 V : BD243C 100 V VCEO Collector-Emitter Voltage : BD243 45 V : BD243A 60 V : BD243B 80 V : BD243C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Mi