View bf199rev datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF199/D RF Transistor NPN Silicon COLLECTOR BF199 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector–Emitter Voltage VCEO 25 Vdc CASE 29–04, STYLE 21 Collector–Base Voltage VCBO 40 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHAR