View bts130 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
TEMPFET? BTS 130 Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 2 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 130 50 V 27 A 0.05 ? TO-220AB C67078-A5001-A3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 k? VDGR 50 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current, TC = 25 °C ID 27 A ISO drain current ID-ISO 7.5 TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, TC = 25° C ID puls 108 Short circuit current, Tj = – 55 ... + 150 ° C 80 ISC Short circuit dissipation, Tj = – 55 ... + 150 °C 1200 W PSCmax Power dissipation 75 Ptot Operating and storage temperature range Tj,
Keywords
bts130 Datasheet, Design, MOSFET, Power
bts130 RoHS, Compliant, Service, Triacs, Semiconductor
bts130 Database, Innovation, IC, Electricity
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