View bu406 datasheet:

BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collector Current (Pulse) 10 A IB Base Current 4 A PC Collector Dissipation 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units ICES Collector Cut-off Current VCE = 400V, VBE = 0 5 mA VCE = 250V, VBE = 0 100 µA VCE = 250V, VBE = 0 @ TC=150°C 1 mA IEBO Emitter C