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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V

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