View cfy30 datasheet:

GaAs FET CFY 30 ________________________________________________________________________________________________________ D a t a s h e e t * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code Pin Configuration Package 1) (tape and reel) 1 2 3 4 CFY 30 A2 Q62703-F97 S D S G SOT-143 Maximum ratings Symbol Value Unit Drain-source voltage VDS 5V Drain-gate voltage VDG 7V Gate-source voltage VGS -4 ... +0.5 V Drain current ID 80 mA Channel temperature TCh 150 °C Storage temperature range Tstg -40...+150