View dsb015 datasheet:

Ordering number:EN1186D DSB015 Silicon Epitaxial Planar Type High-Speed Switching Diode Features Package Dimensions · Ideally suited for use in hybrid ICs because of small- unit:mm sized package. 1148 · Fast switching speed. [DSB015] C:Cathode A:Anode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage VRM 75 V Reverse Voltage VR 50 V Surge Current IFSM 1 µs 4 A Average Rectified Current IO 150 mA Peak Forward Current IFM 300 mA Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage VF IF=10mA 0.75 1.0 V IF=50mA 0.85 1.0 V IF=100mA 1.2 V Reverse Current IR VR=50V