View dtc114yerev1 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these CASE 463–01, STYLE 1 individual components by integrating them into a single device. The DTC114YE SOT–416/SC–90 is housed in the SOT–416/SC–90 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit
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dtc114yerev1 Datasheet, Design, MOSFET, Power
dtc114yerev1 RoHS, Compliant, Service, Triacs, Semiconductor
dtc114yerev1 Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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