View dwc010 datasheet:

Ordering number:EN2832B DWC010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features Package Dimensions · Ideally suited for use in hybrid ICs because of very unit:mm small-sized package. 1164A · High breakdown voltage : VR=200V. [DWC010] · Small interterminal capacitance. 1:Anode 2:Anode 3:Cathode 4:Cathode SANYO:CP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Peak Forward Current IFM Unit Rating 300 mA Total Rating 450 mA Average Rectified Current IO Unit Rating 100 mA Total Rating 150 mA Surge Forward Current IFSM 1µs, unit rating 4 A 1µs, total rating 6 A Allowable Power Dissipation P 200 mW Junction Temperature Tj 125