View fss139 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2116 • 2.5V drive. [FSS139] 85 1 : Source 2 : Source 14 3 : Source 0.2 5.0 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --48 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2 0.8mm) 1.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=2
Keywords
fss139 Datasheet, Design, MOSFET, Power
fss139 RoHS, Compliant, Service, Triacs, Semiconductor
fss139 Database, Innovation, IC, Electricity
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