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irfl024n

PD - 91861A IRFL024N HEXFET® Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.075? Fast Switching G Fully Avalanche Rated ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy auto

Keywords

 irfl024n Datasheet, Design, MOSFET, Power

 irfl024n RoHS, Compliant, Service, Triacs, Semiconductor

 irfl024n Database, Innovation, IC, Electricity

 

 
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