View irfp150a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ? 1 Lower RDS(ON) : 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 43 ID A ? Continuous Drain Current (TC=100 ) 30.4 1 IDM Drain Current-Pulsed A 170 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 740 O IAR Avalanche Current 1 43 A O EAR Repetitive Avalanche Energy 1 19.3 mJ O 3 dv/dt Peak Diode Recovery dv