View irfp3703 datasheet:

PD - 93917A IRFP3703 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028? 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A IDM Pulsed Drain Current 1000 PD @TC = 25°C Power Dissipation 230 W PD @TA = 25°C Power Dissipation 3.8 Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.65