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irfp90n20d

PD - 94301A SMPS MOSFET IRFP90N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023? 94A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 94 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A IDM Pulsed Drain Current 380 PD @TC = 25°C Power Dissipation 580 W Linear Derating Factor 3.8 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.7 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C S

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