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Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25 ) 20 ID A Continuous Drain Current (TC=100 ) 14.1 IDM Drain Current-Pulsed 120 A VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 343 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 3.4 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Total Power Dissipation (TC=25 ) 34 W ... See More ⇒