All Transistors. Datasheet

 

View irfsz34a sam datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

irfsz34a_sam

Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25 ) 20 ID A Continuous Drain Current (TC=100 ) 14.1 IDM Drain Current-Pulsed 120 A VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 343 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 3.4 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Total Power Dissipation (TC=25 ) 34 W

Keywords

 irfsz34a sam Datasheet, Design, MOSFET, Power

 irfsz34a sam RoHS, Compliant, Service, Triacs, Semiconductor

 irfsz34a sam Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.