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Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 30 ID A Continuous Drain Current (TC=100 ) 21.2 IDM Drain Current-Pulsed A 200 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 771 IAR Avalanche Current A 30 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 5.5 Total Power Dissip... See More ⇒