View irfz34a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature µA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 o Continuous Drain Current (TC=25 C) 30 ID A Continuous Drain Current (TC=100 oC) 21.2 IDM Drain Current-Pulsed 1 120 A O _ 20 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 463 O IAR Avalanche Current 1 30 A O EAR Repetitive Avalanche Energy 1 mJ 7.7 O 3 dv/dt Peak Diode Recovery dv/dt V