View irfz34s datasheet:

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest p