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irfz34vs

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

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 irfz34vs Datasheet, Design, MOSFET, Power

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 irfz34vs Database, Innovation, IC, Electricity

 

 
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