View irfz44a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 o ) C 50 ID A Continuous Drain Current (TC=100 oC) 35.4 IDM Drain Current-Pulsed A 1 200 O _ 20 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 857 O IAR Avalanche Current 50 A 1 O EAR Repetitive Avalanche Energy 1 12.6 mJ O dv/dt Peak Diode Recovery dv/dt