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irhna9260

PD - 93969 IRHNA9260 JANSR2N7426U RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/655 ® RAD-Hard™ HEXFET TECHNOLOGY SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA9260 100K Rads (Si) 0.154? -29A JANSR2N7426U IRHNA93260 300K Rads (Si) 0.154? -29A JANSF2N7426U SMD-2 International Rectifier’s RAD-HardTM HEXFET® Features: MOSFET technology provides high performance power MOSFETs for space applications. This tech- Single Event Effect (SEE) Hardened nology has over a decade of proven performance Ultra Low RDS(on) and reliability in satellite applications. These de- Low Total Gate Charge vices have been characterized for both Total Dose Proton Tolerant and Single Event Effects (SEE). The combinati

Keywords

 irhna9260 Datasheet, Design, MOSFET, Power

 irhna9260 RoHS, Compliant, Service, Triacs, Semiconductor

 irhna9260 Database, Innovation, IC, Electricity

 

 
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