View irhna9260 datasheet:

PD - 93969 IRHNA9260 JANSR2N7426U RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/655 ® RAD-Hard™ HEXFET TECHNOLOGY SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA9260 100K Rads (Si) 0.154? -29A JANSR2N7426U IRHNA93260 300K Rads (Si) 0.154? -29A JANSF2N7426U SMD-2 International Rectifier’s RAD-HardTM HEXFET® Features: MOSFET technology provides high performance power MOSFETs for space applications. This tech- Single Event Effect (SEE) Hardened nology has over a decade of proven performance Ultra Low RDS(on) and reliability in satellite applications. These de- Low Total Gate Charge vices have been characterized for both Total Dose Proton Tolerant and Single Event Effects (SEE). The combinati