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irll014n

PD- 91499B IRLL014N HEXFET® Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.14? Fast Switching G Fully Avalanche Rated ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automa

Keywords

 irll014n Datasheet, Design, MOSFET, Power

 irll014n RoHS, Compliant, Service, Triacs, Semiconductor

 irll014n Database, Innovation, IC, Electricity

 

 
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