View irlml2502 datasheet:

PD - 93757B IRLML2502 HEXFET� Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (<1.1mm) 3 D Available in Tape and Reel RDS(on) = 0.045? Fast Switching S 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050