View irlml2502 datasheet:

PD - 93757B IRLML2502 HEXFET® Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (<1.1mm) 3 D Available in Tape and Reel RDS(on) = 0.045? Fast Switching S 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce Micro3? a HEXFET Power MOSFET with the industry's smallest