View irlml2803 datasheet:

PD - 9.1258C IRLML2803 HEXFET® Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 30V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.25? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the Micro3 standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's small