View irlml6401 datasheet:

PD- 93756C IRLML6401 HEXFET® Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (<1.1mm) VDSS = -12V Available in Tape and Reel 3 D Fast Switching RDS(on) = 0.05? S 2 1.8V Gate Rated Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's s