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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

irf1404

PD -91896E IRF1404 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approxim

Keywords

 irf1404 Datasheet, Design, MOSFET, Power

 irf1404 RoHS, Compliant, Service, Triacs, Semiconductor

 irf1404 Database, Innovation, IC, Electricity

 

 
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