View irf520a datasheet:

IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 C) 9.2 ID A ? Continuous Drain Current (TC=100 C) 6.5 1 IDM Drain Current-Pulsed O 37 A + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy O 113 mJ IAR Avalanche Current 1 O 9.2 A EAR Repetitive Avalanche Energy 1 O 4.5 mJ dv/dt Pea