View irf620b datasheet:

November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 200V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F