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irf640b

November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast switchin

Keywords

 irf640b Datasheet, Design, MOSFET, Power

 irf640b RoHS, Compliant, Service, Triacs, Semiconductor

 irf640b Database, Innovation, IC, Electricity

 

 
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