All Transistors. Datasheet

 

View irf640n datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

irf640n

PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications a

Keywords

 irf640n Datasheet, Design, MOSFET, Power

 irf640n RoHS, Compliant, Service, Triacs, Semiconductor

 irf640n Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.