View irf830a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o C Continuous Drain Current (TC=25 ) 4.5 ID A Continuous Drain Current (TC=100 oC 2.9 ) IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 338 O IAR Avalanche Current 1 4.5 A O EAR Repetitive Avalanche Energy 1 mJ 7.3 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Po