View irf830b datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switchin
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irf830b Datasheet, Design, MOSFET, Power
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