View irf840a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8 ID A o C Continuous Drain Current (TC=100 ) 5.1 IDM Drain Current-Pulsed 1 32 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 640 O IAR Avalanche Current 1 8 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dis