View ksc5367 datasheet:

NPN TRIPLE DIFFUSED KSC5367 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6 1.Base 2.Collector 3.Emitter Base Current DC IB 2 A Pulse IBP 4 Collector Dissipation (TC=25 ) PC 80 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 Pulse Test : Pulse Width=5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1600 - - V Collector Emitte