View ksc5367f datasheet:

NPN TRIPLE DIFFUSED KSC5367F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • High speed Switching TO-220F • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6 Base Current DC IB 2 A 1.Base 2.Collector 3. emitter Pulse IBP 4 Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 Pulse Test : Pulse Width=5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 0.5mA, IE = 0 1600 - - V Collector Em