View ksr1210 datasheet:

KSR1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10 ) • Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW Collector Dissipation PC 300 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IE=1mA, IB=0 40 V VCB=30V, IE=0 Col