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KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BVCBO IC=10 , IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 40 V BVEBO IE=10 , IC=0 V Emitter-Base Breakdown Voltage 6 Collector Cut-off Current ICEX nA VCE=30V, VEB=3V 50 DC Current Gain hFE KST3903 VCE=1V, IC=0.1mA 20 KST3904 40 KST3903 VCE=1... See More ⇒