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KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BVCBO IC= -10 , IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -1.0mA, IB=0 -40 V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 -5 V Collector Cut-off Current ICEX VCE= -30V, VEB= -3V -50 nA DC Current Gain hFE VCE= -1V, IC= -0.1mA 60 VCE= -1V, IC= -1mA 80 ... See More ⇒