View mbrp400100ctlrev0 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP400100CTL/D Advance Information POWERTAP II? MBRP400100CTL SWITCHMODE? Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: SCHOTTKY BARRIER Features: RECTIFIER • Dual Diode Construction — May be Paralleled for Higher Current Output 400 AMPERES • Guardring for Stress Protection 100 VOLTS • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Recyclable Epoxy 2 • Guaranteed Reverse Avalanche Energy Capability 1 • Improved Mechanical Ratings 1 3 2 3 CASE 357C–03 POWERTAP II MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VR
Keywords
mbrp400100ctlrev0 Datasheet, Design, MOSFET, Power
mbrp400100ctlrev0 RoHS, Compliant, Service, Triacs, Semiconductor
mbrp400100ctlrev0 Database, Innovation, IC, Electricity
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